MEV B-COMPENSATION IMPLANTS INTO N-TYPE GAAS AND INP

被引：17

作者：

NADELLA, RK ^{[1
]}

VELLANKI, J ^{[1
]}

RAO, MV ^{[1
]}

HOLLAND, OW ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB, OAK RIDGE, TN 37831 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 06期

关键词：

D O I：

10.1063/1.351608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High energy B implantations were performed into n-type GaAs and InP at room temperature in the range of energies from 1 to 5 MeV and fluences from 10(11) to 10(16) cm-2. The material did not become amorphous for any of the fluences used. Buried layers with resistivities as high as 10(8) OMEGA cm and 10(6) OMEGA cm were obtained in GaAs and InP, respectively, after heat treatments. The breakdown voltages corresponding to the highest resistivities are 80 and 35 V, respectively, in GaAs and InP. In GaAs, the Rutherford backscattering analysis on the annealed samples showed an aligned yield close to that of a virgin sample, whereas, the yield in InP is more than that of the as-implanted sample.

引用

页码：2179 / 2184

页数：6

共 27 条

[1] BEHAVIOR OF BURIED OXYGEN IMPLANTED LAYERS IN HIGHLY DOPED GAAS [J].