CHARACTERIZATION OF DEVICE ISOLATION IN GAAS-MESFET CIRCUITS BY BORON IMPLANTATION

被引：13

作者：

CLAUWAERT, F

VANDAELE, P

BAETS, R

LAGASSE, P

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期

关键词：

D O I：

10.1149/1.2100537

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：711 / 714

页数：4

共 14 条

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[4]

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[5] PROTON IMPLANTATION ISOLATION FOR MICROWAVE MONOLITHIC CIRCUITS [J].

ESFANDIARI, R ;

FENG, M ;

KANBER, H .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) :29-31

[6] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J].

FOYT, AG ;

LINDLEY, WT ;

WOLFE, CM ;

DONNELLY, JP .

SOLID-STATE ELECTRONICS, 1969, 12 (04) :209-&

[7]

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[8]

HARADA H, 1974, 4TH P C ION IMPL OS

[9] SELF-ALIGNED SUB-MICRON GATE DIGITAL GAAS INTEGRATED-CIRCUITS [J].

LEVY, HM ;

LEE, RE .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :102-104

[10]

PAULSON NM, 1982, 1982 GAAS IC S NEW O, P166

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