COMPENSATION IN N-TYPE GAAS RESULTING FROM NITROGEN ION-IMPLANTATION

被引:28
作者
DUNCAN, WM
MATTESON, S
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10.1063/1.334074
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O59 [应用物理学];
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页码:1059 / 1062
页数:4
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[1]  
DOERBECK FH, 1979, I PHYSICS C SERIES, V45, P335
[2]   A SINGLE STEP SELECTIVE IMPLANTATION TECHNOLOGY FOR MULTIPLY DOPED LAYERS USING PROXIMITY ANNEALING [J].
DUNCAN, WM ;
WILLIAMS, RE .
ELECTRON DEVICE LETTERS, 1981, 2 (12) :309-311
[3]  
EISEN F, 1982, GAAS FET PRINCIPLES, P117
[4]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[5]   MEASUREMENT OF HIGH-RESISTIVITY SEMICONDUCTORS USING VANDERPAUW METHOD [J].
HEMENGER, PM .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (06) :698-700
[6]  
KAMINSKA M, 1982, I PHYS C SER, V63, P197
[7]   SI-28 IMPLANTATION INTO AR-40 IMPLANT-PRETREATED SEMI-INSULATING GAAS SUBSTRATES - MOBILITY AND ACTIVATION EFFICIENCY ENHANCEMENT [J].
LIU, SG ;
NARAYAN, SY ;
MAGEE, CW ;
WU, CP .
APPLIED PHYSICS LETTERS, 1982, 41 (01) :72-75
[8]  
MANDAL RP, 1979, I PHYSICS PHYSICAL S, V45, P462
[9]   OXYGEN-RELATED GETTERING OF SILICON DURING GROWTH OF BULK GAAS BRIDGMAN CRYSTALS [J].
MARTIN, GM ;
JACOB, G ;
HALLAIS, JP ;
GRAINGER, F ;
ROBERTS, JA ;
CLEGG, B ;
BLOOD, P ;
POIBLAUD, G .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (09) :1841-1856
[10]   PASSIVATION OF GAAS-SURFACES [J].
PANKOVE, JI ;
BERKEYHEISER, JE ;
KILPATRICK, SJ ;
MAGEE, CW .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) :359-370