MODEL OF TEMPERATURE-DEPENDENT DEFECT INTERACTION AND AMORPHIZATION IN CRYSTALLINE SILICON DURING ION IRRADIATION

被引：135

作者：

HECKING, N

HEIDEMANN, KF

KAAT, ET

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 15卷 / 1-6期

关键词：

D O I：

10.1016/0168-583X(86)90407-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：760 / 764

页数：5

共 12 条

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KAAT, ET
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01): : K81 - K84
[2] CARTER G, 1978, RADIAT EFF DEFECT S, V36, P1, DOI 10.1080/00337577808233164
[3] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL
DENNIS, JR
HALE, EB
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1119 - 1127
[4] EICHHOLZ D, 1978, THESIS U DORTMUND
[5] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &
[6] THE OPTICAL-PROPERTIES OF SIOX FORMED BY HIGH-DOSE SI ION-IMPLANTATION INTO FUSED-SILICA
HEIDEMANN, KF
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 61 (3-4): : 235 - 246
[7] COMPLEX-REFRACTIVE-INDEX PROFILES OF 4-MEV GE ION-IRRADIATION DAMAGE IN SILICON
HEIDEMANN, KF
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 44 (04): : 465 - 485
[8] HEIDEMANN KF, 1979, I PHYS C SER, V46, P492
[9] SPATIAL CORRELATION BETWEEN PRIMARY AND SECONDARY DEFECT PROFILES AFTER HIGH-DOSE SELF-IRRADIATION OF SI CRYSTALS
KAPPERT, HF
PFANNKUCHE, N
HEIDEMANN, KF
KAAT, ET
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 45 (1-2): : 33 - 43
[10] CRITERIA FOR BOMBARDMENT-INDUCED STRUCTURAL-CHANGES IN NON-METALLIC SOLIDS
NAGUIB, HM
KELLY, R
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (01): : 1 - 12

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