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SPATIAL CORRELATION BETWEEN PRIMARY AND SECONDARY DEFECT PROFILES AFTER HIGH-DOSE SELF-IRRADIATION OF SI CRYSTALS

被引：10
作者：
KAPPERT, HF
PFANNKUCHE, N
HEIDEMANN, KF
KAAT, ET
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1979年 / 45卷 / 1-2期
关键词：
D O I：
10.1080/00337577908208406
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：33 / 43
页数：11
相关论文
共 36 条
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    [J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 322 - 323
  • [6] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA
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    SIGMON, TW
    [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158
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  • [10] NATURE OF SWIRLS AND ITS SIGNIFICANCE FOR UNDERSTANDING POINT-DEFECTS IN SILICON
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    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (01): : K83 - K87
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