RECRYSTALLIZATION OF ION-IMPLANTED SILICON LAYERS .2. IMPLANT SPECIES EFFECT

[1] BEANLAND DG, COMMUNICATION

[2] BLOOD P, 1976, ION IMPLANTATION SEM

[3] BOOTH MM, 1976, THESIS U MANCHESTER

[4] ANNEALING OF DAMAGE PRODUCED BY COPPER-ION IMPLANTATION OF SILICON SINGLE-CRYSTALS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 23 (01): : 63 - 66

[5] DOSE DEPENDENCE OF RESIDUAL LATTICE DISORDER IN ION-IMPLANTED AND ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 322 - 323

[6] CHRISTODOULIDES CE, NUCL INSTRUM METHODS

[7] CHU WK, 1975, ION IMPLANTATION SEM, P177

[8] Davidson S. M., 1970, Radiation Effects, V6, P33, DOI 10.1080/00337577008235043

[9] PARTICULARITIES OF CRYSTALLINE TO AMORPHOUS STATE CONVERSION IN SILICON HEAVILY DAMAGED BY 140 KEV SI++ IONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01): : 139 - 149

[10] ANNEALING BEHAVIOR OF SILICON BOMBARDED WITH 140 KEV SI++ IONS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (03): : 213 - 214

[1] BEANLAND DG, COMMUNICATION

[2] BLOOD P, 1976, ION IMPLANTATION SEM

[3] BOOTH MM, 1976, THESIS U MANCHESTER

[4] ANNEALING OF DAMAGE PRODUCED BY COPPER-ION IMPLANTATION OF SILICON SINGLE-CRYSTALS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 23 (01): : 63 - 66

[5] DOSE DEPENDENCE OF RESIDUAL LATTICE DISORDER IN ION-IMPLANTED AND ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 322 - 323

[6] CHRISTODOULIDES CE, NUCL INSTRUM METHODS

[7] CHU WK, 1975, ION IMPLANTATION SEM, P177

[8] Davidson S. M., 1970, Radiation Effects, V6, P33, DOI 10.1080/00337577008235043

[9] PARTICULARITIES OF CRYSTALLINE TO AMORPHOUS STATE CONVERSION IN SILICON HEAVILY DAMAGED BY 140 KEV SI++ IONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01): : 139 - 149

[10] ANNEALING BEHAVIOR OF SILICON BOMBARDED WITH 140 KEV SI++ IONS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (03): : 213 - 214