DAMAGE DEPENDENCE OF EPITAXIAL REGROWTH RATE DURING ANNEALING OF AMORPHOUS SILICON FORMED BY ION-IMPLANTATION

被引：4

作者：

BEANLAND, DG ^{[1
]}

WILLIAMS, JS ^{[1
]}

机构：

[1] AARHUS UNIV,DK-8000 AARHUS C,DENMARK

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 36卷 / 1-2期

关键词：

D O I：

10.1080/00337577808233165

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：15 / 21

页数：7

共 29 条

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[2] BEANLAND DG, UNPUBLISHED
[3] BLOOD P, UNPUBLISHED
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[5] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI
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SIGMON, TW
[J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158
[6] Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443
[7] DEARNALEY G., 1973, ION IMPLANTATION
[8] EISEN FH, 1973, ION IMPLANTATION SEM, P99
[9] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE
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MAYER, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +
[10] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279