DAMAGE DEPENDENCE OF EPITAXIAL REGROWTH RATE DURING ANNEALING OF AMORPHOUS SILICON FORMED BY ION-IMPLANTATION

[11] CHANNELING MEASUREMENTS IN AS-DOPED SI [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3425 - &

[12] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[13] Johansen A., 1976, Applications of ion beams to materials 1975, P267

[14] JOHANSSON NG, 1970, SOLID STATE ELECTRON, V13, P123, DOI 10.1016/0038-1101(70)90183-8

[15] KENNEDY EF, 1976, 5TH INT C ION IMPL S

[16] MATTHEWS MD, 1974, R7805 AERE HARW REP

[17] Mayer J. W., 1970, ION IMPLANTATION SEM

[18] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[19] MEZEY G, UNPUBLISHED

[20] MITCHELL JB, 1975, ION IMPLANTATION SEM, P493

[11] CHANNELING MEASUREMENTS IN AS-DOPED SI [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3425 - &

[12] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[13] Johansen A., 1976, Applications of ion beams to materials 1975, P267

[14] JOHANSSON NG, 1970, SOLID STATE ELECTRON, V13, P123, DOI 10.1016/0038-1101(70)90183-8

[15] KENNEDY EF, 1976, 5TH INT C ION IMPL S

[16] MATTHEWS MD, 1974, R7805 AERE HARW REP

[17] Mayer J. W., 1970, ION IMPLANTATION SEM

[18] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[19] MEZEY G, UNPUBLISHED

[20] MITCHELL JB, 1975, ION IMPLANTATION SEM, P493