CHANNELING MEASUREMENTS IN AS-DOPED SI

[1] Andersen J. U., 1971, Radiation Effects, V7, P25, DOI 10.1080/00337577108232561

[2] A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING ION-SCATTERING TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (01) : 23 - &

[3] CHOU S, 1971, THESIS STANFORD U

[4] SILICON DEFECT STRUCTURE INDUCED BY ARSENIC DIFFUSION AND SUBSEQUENT STEAM OXIDATION [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) : 453 - &

[5] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[6] Domeij B., 1970, Radiation Effects, V6, P155, DOI 10.1080/00337577008235059

[7] EISEN FH, 1971, INT C ION IMPLANTATI, P287

[8] EISEN FH, UNPUBLISHED

[9] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +

[10] FLADDA G, 1969, RADIATION EFFECTS, V1, P243

[1] Andersen J. U., 1971, Radiation Effects, V7, P25, DOI 10.1080/00337577108232561

[2] A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING ION-SCATTERING TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (01) : 23 - &

[3] CHOU S, 1971, THESIS STANFORD U

[4] SILICON DEFECT STRUCTURE INDUCED BY ARSENIC DIFFUSION AND SUBSEQUENT STEAM OXIDATION [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) : 453 - &

[5] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[6] Domeij B., 1970, Radiation Effects, V6, P155, DOI 10.1080/00337577008235059

[7] EISEN FH, 1971, INT C ION IMPLANTATI, P287

[8] EISEN FH, UNPUBLISHED

[9] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +

[10] FLADDA G, 1969, RADIATION EFFECTS, V1, P243