PRODUCTION AND REARRANGEMENT OF RADIATION DEFECTS IN ION-IMPLANTED SEMICONDUCTORS

[1] AKIMCHENKO IP, 1976, ELEKTRON TEKH POLUPR, P40

[2] INFLUENCE OF IMPLANTED DOSE ON RECRYSTALLIZATION OF SI AMORPHOUS LAYER [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 154 - 155

[3] BARANOV AI, 1977, SOV PHYS SEMICOND+, V11, P53

[4] BARANOV AI, 1973, SOV PHYS SEMICOND, V7, P1482

[5] BARANOV I, 1977, RAD EFFECTS SEMICOND, P505

[6] Chadderton L. T., 1971, Radiation Effects, V8, P77, DOI 10.1080/00337577108231012

[7] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 645 - 648

[8] DENIS JR, 1975, LATTICE DEFECTS SEMI, P467

[9] AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04): : 219 - 225

[10] HIGH DOSE EFFECTS IN ION-IMPLANTATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (02): : 69 - 71

[1] AKIMCHENKO IP, 1976, ELEKTRON TEKH POLUPR, P40

[2] INFLUENCE OF IMPLANTED DOSE ON RECRYSTALLIZATION OF SI AMORPHOUS LAYER [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 154 - 155

[3] BARANOV AI, 1977, SOV PHYS SEMICOND+, V11, P53

[4] BARANOV AI, 1973, SOV PHYS SEMICOND, V7, P1482

[5] BARANOV I, 1977, RAD EFFECTS SEMICOND, P505

[6] Chadderton L. T., 1971, Radiation Effects, V8, P77, DOI 10.1080/00337577108231012

[7] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 645 - 648

[8] DENIS JR, 1975, LATTICE DEFECTS SEMI, P467

[9] AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04): : 219 - 225

[10] HIGH DOSE EFFECTS IN ION-IMPLANTATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (02): : 69 - 71