PRODUCTION AND REARRANGEMENT OF RADIATION DEFECTS IN ION-IMPLANTED SEMICONDUCTORS

[21] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &

[22] PARTICULARITIES OF CRYSTALLINE TO AMORPHOUS STATE CONVERSION IN SILICON HEAVILY DAMAGED BY 140 KEV SI++ IONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01): : 139 - 149

[23] KENNEDY EF, 1976, 5TH INT C ION IMPL S

[24] Kimerling L. C., 1975, Lattice Defects in Semiconductors, 1974, P126

[25] Study of the annealing behaviour of high dose implants in silicon and germanium crystals [J]. Radiation Effects, 1975, 24 (04): : 255 - 262

[26] LENCHENKO VM, 1973, RAD EFFECTS CRYSTALS, P71

[27] Mayer J. W., 1970, ION IMPLANTATION SEM

[28] NOVOZHILOV OA, 1975, SOV PHYS SEMICOND+, V9, P1452

[29] PRIDACHIN NB, 1971, FIZ TEKH POLUPROV, V4, P166

[30] ROMANOV SI, 1976, SOV PHYS SEMICOND+, V10, P519

[21] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &

[22] PARTICULARITIES OF CRYSTALLINE TO AMORPHOUS STATE CONVERSION IN SILICON HEAVILY DAMAGED BY 140 KEV SI++ IONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01): : 139 - 149

[23] KENNEDY EF, 1976, 5TH INT C ION IMPL S

[24] Kimerling L. C., 1975, Lattice Defects in Semiconductors, 1974, P126

[25] Study of the annealing behaviour of high dose implants in silicon and germanium crystals [J]. Radiation Effects, 1975, 24 (04): : 255 - 262

[26] LENCHENKO VM, 1973, RAD EFFECTS CRYSTALS, P71

[27] Mayer J. W., 1970, ION IMPLANTATION SEM

[28] NOVOZHILOV OA, 1975, SOV PHYS SEMICOND+, V9, P1452

[29] PRIDACHIN NB, 1971, FIZ TEKH POLUPROV, V4, P166

[30] ROMANOV SI, 1976, SOV PHYS SEMICOND+, V10, P519