STATIC MAGNETIC-SUSCEPTIBILITY OF SI-P ACROSS THE METAL-INSULATOR-TRANSITION

被引:35
作者
OOTUKA, Y
MATSUNAGA, N
机构
[1] Cryogenic Center, University of Tokyo, Tokyo 113, Yayoi, Bunkyo-ku
关键词
Anderson localization; experiment; low temperature; magnetic susceptibility; metal-insulator transi tion; random system; Si: P;
D O I
10.1143/JPSJ.59.1801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The static magnetic susceptibility of phosphorus doped silicon is measured over the temperature range from 10 mK to 4.2 K at phosphorus concentrations from 5.3 × 1017 to 2.8 × 1019 cm-3. The paramagnetic deviation of susceptibility is observed for samples N≦4.5 × 1018 cm-3 at low temperatures and the donor susceptibility χD varies continuously across the metal-insulator transition. The temperature dependence of χd is roughly described by T-a law for the lightly metallic samples as well as for the non-metallic ones. The results are discussed in connection with the theories and the experiments of ESR and specific heat. © 1990, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.
引用
收藏
页码:1801 / 1809
页数:9
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