ANELASTICITY AND STRESS-INDUCED ORDERING OF POINT DEFECTS IN CRYSTALS

被引：217

作者：

NOWICK, AS

HELLER, WR

机构：

来源：

ADVANCES IN PHYSICS | 1963年 / 12卷 / 47期

关键词：

D O I：

10.1080/00018736300101293

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：251 / 298

页数：48

共 47 条

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[3]

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[4]

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[5] STRESS-INDUCED ALIGNMENT OF ANISOTROPIC DEFECTS IN CRYSTALS [J].

CORBETT, JW ;

WATKINS, GD .

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[6] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].

CORBETT, JW ;

WATKINS, GD ;

CHRENKO, RM ;

MCDONALD, RS .

PHYSICAL REVIEW, 1961, 121 (04) :1015-&

[7]

DEHLINGER U, 1960, Z METALLKD, V51, P457

[8]

DEJONG M, 1962, ACTA METALL MATER, V10, P334

[9]

DIJKSTRA LJ, 1947, PHILIPS RES REP, V2, P357

[10] THE FORCE ON AN ELASTIC SINGULARITY [J].

ESHELBY, JD .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 244 (877) :87-112

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