EFFECT OF HYDROSTATIC-PRESSURE ON PHOTOCONDUCTIVITY AND ELECTROLUMINESCENCE OF GAP-N

被引：6

作者：

WOLFE, MI

KRESSEL, H

HALPERN, T

RACCAH, PM

机构：

[1] USA,ELECT COMMAND,AMSELNLM1,FT MONMOUTH,NJ 07703

[2] RCA LABS,PRINCETON,NJ 08540

[3] YESHIVA UNIV,BELFER GRAD SCH,NEW YORK,NY 10033

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 06期

关键词：

D O I：

10.1063/1.1655182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：279 / 281

页数：3

共 12 条

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[2]

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[3] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].

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SHAW, RW ;

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[4] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J].

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THOMAS, DG .

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[5]

ELLIOTT RJ, 1966, PHONONS PERFECT LATT

[6] PHOTOCURRENT MEASUREMENTS ON GAP - N GREEN-LIGHT-EMITTING DIODES [J].

KRESSEL, H ;

LADANY, I .

APPLIED PHYSICS LETTERS, 1973, 22 (05) :224-226

[7]

LADANY I, 1972, RCA REV, V33, P517

[8] EFFICIENT GREEN ELECTROLUMINESCENT JUNCTIONS IN GAP [J].

LOGAN, RA ;

WHITE, HG ;

WIEGMANN, W .

SOLID-STATE ELECTRONICS, 1971, 14 (01) :55-&

[9]

LUDWIG W, 1966, THEORY CRYSTAL DEFEC

[10] EFFECT OF UNIAXIAL STRESS ON BINDING TO ISOELECTRONIC IMPURITIES IN GAP [J].

MERZ, JL ;

SERGENT, AM ;

BALDERES.A .

PHYSICAL REVIEW B, 1972, 6 (08) :3082-&

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