QUANTUM EFFICIENCY OF PHOTOCONDUCTIVE DETECTORS - INFLUENCE OF REFLECTION AND SURFACE RECOMBINATION VELOCITY

被引：10

作者：

DJURIC, Z

机构：

来源：

INFRARED PHYSICS | 1987年 / 27卷 / 06期

关键词：

D O I：

10.1016/0020-0891(87)90036-4

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：407 / 410

页数：4

共 10 条

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[5] THE EXPONENTIAL OPTICAL-ABSORPTION BAND TAIL OF HG1-XCDXTE [J].

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[6] SURFACE RECOMBINATION IN PHOTOCONDUCTORS [J].

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INFRARED PHYSICS, 1985, 25 (04) :615-618

[7] ULTIMATE PERFORMANCE OF CDXHG1-XTE PHOTORESISTORS AS A FUNCTION OF DOPING [J].

JOZWIKOWSKI, K ;

PIOTROWSKI, J .

INFRARED PHYSICS, 1985, 25 (06) :723-727

[8]

Moss T.S., 1973, SEMICONDUCTOR OPTO E

[9] RECOMBINATION MECHANISMS IN P-TYPE HGCDTE - FREEZEOUT AND BACKGROUND FLUX EFFECTS [J].

SCHACHAM, SE ;

FINKMAN, E .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2001-2009

[10]

SPEARS DL, 1984, P IRIS ACTIVE SYSTEM, P331

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