RISE TIME OF SILICON P-I-N PHOTO-DIODES

被引:12
作者
DJURIC, Z
RADJENOVIC, B
机构
关键词
D O I
10.1016/0038-1101(83)90141-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1143 / 1149
页数:7
相关论文
共 9 条
[1]   PIN PHOTODETECTOR UNDER TRANSIENT CONDITIONS - SIMULATION AND EXPERIMENTS [J].
CONTI, M ;
CORDA, G ;
DEPADOVA, M .
SOLID-STATE ELECTRONICS, 1979, 22 (02) :151-155
[2]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[3]  
GRUDININ AB, 1981, FTP, V15, P920
[4]  
LUKOWSKY G, 1964, J APPL PHYS, V35, P622
[5]   THIN SILICON FILM P-I-N PHOTO-DIODES WITH INTERNAL-REFLECTION [J].
MULLER, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) :247-253
[6]   AN OPTIMIZED AVALANCHE PHOTODIODE [J].
RUEGG, HW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (05) :239-+
[7]  
SZE SM, 1969, PHYSICS SEMICONDUCTO
[8]  
WEBB PP, 1974, RCA REV, V35, P234
[9]  
YUNCHERMAN VM, 1977, RADIOTEKNIKA ELEKTRO, V6, P1228