THIN SILICON FILM P-I-N PHOTO-DIODES WITH INTERNAL-REFLECTION

被引:14
作者
MULLER, J
机构
关键词
D O I
10.1109/T-ED.1978.19065
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:247 / 253
页数:7
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共 14 条
[1]  
[Anonymous], 1967, ATZPRAXIS HALBLEITER
[2]  
ATAMAN A, UNPUBLISHED
[3]  
BEHM K, 1977, LASER ELEKTROOPTIK, V2, P56
[4]   GENERATION OF FAULTLESS MULTI-PINHOLE MASKS BY MEANS OF SPATIAL-FILTERING [J].
DAMMANN, H ;
KLOTZ, E .
OPTICS COMMUNICATIONS, 1975, 13 (03) :268-272
[5]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[6]   RESPONSIVITY OF AVALANCHE PHOTODIODES IN PRESENCE OF MULTIPLE REFLECTIONS [J].
GOEDBLOED, JJ ;
JOOSTEN, J .
ELECTRONICS LETTERS, 1976, 12 (14) :363-364
[7]  
KOHLRAUSCH F, 1956, PRAKTISCHE PHYSIK, V1, P463
[8]  
KRUMPHOLZ O, 1968, Z ANGEW PHYSIK, V25, P156
[9]   MULTIPLE-PASS THIN-FILM SILICON SOLAR CELL [J].
REDFIELD, D .
APPLIED PHYSICS LETTERS, 1974, 25 (11) :647-648
[10]  
SCHICKETANZ D, 1977, SIEMENS FORSCH ENTW, V6, P92