FACTORS AFFECTING THE MOLYBDENUM LINE SLOPE BY REACTIVE ION ETCHING

被引：15

作者：

KUO, Y

机构：

[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 06期

关键词：

D O I：

10.1149/1.2086829

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Factors affecting the slope of the reactive ion etched molybdenum line have been studied with a simulation method and with experiments. Plasma chemistry and process parameters of the CF4/O2 mixture for the molybdenum etch have been examined. The theoretical calculation matches experimental results. Surface topography and composition of the etched molybdenum have been analyzed. A highly sloped molybdenum profile can be obtained by using the RIE method with a large process window. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1907 / 1911

页数：5

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