SELF-ORGANIZATION DURING SI INCORPORATION IN MBE-GROWN VICINAL GAAS(001) SURFACES

被引：17

作者：

DAWERITZ, L

HAGENSTEIN, K

SCHUTZENDUBE, P

机构：

[1] Paul Drude Institute for Solid State Electronics, D-O- 1086 Berlin

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90789-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The attachment kinetics of Si atoms at MiSorientation steps on vicinal GaAs(001) surfaces tilted toward the (111)Ga plane has been studied by real-time RHEED measurements. For a misorientation of 2-degrees and a substrate temperature of 580-degrees-C it is demonstrated that a self-organized in-plane incorporation of Si atoms takes place. The surface with a wire-like arrangement of the Si atoms can be overgrown by GaAs without adverse effects on the growth front.

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收藏

页码：1051 / 1055

页数：5

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