SURFACE ELECTRONIC-STRUCTURE OF COSI2(111)

被引：36

作者：

PIRRI, C ^{[1
]}

GEWINNER, G ^{[1
]}

PERUCHETTI, JC ^{[1
]}

BOLMONT, D ^{[1
]}

DERRIEN, J ^{[1
]}

机构：

[1] CTR RECH MECAN CROISSANCE CRISTALLINE,F-13288 MARSEILLE 9,FRANCE

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.38.1512

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1512 / 1515

页数：4

共 19 条

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[9] GROWTH OF EPITAXIAL ULTRATHIN CONTINUOUS COSI2 LAYERS ON SI(111)
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