THIN METALLIC SILICIDE FILMS EPITAXIALLY GROWN ON SI(111) AND THEIR ROLE IN SI-METAL-SI DEVICES

被引：56

作者：

DERRIEN, J ^{[1
]}

DAVITAYA, FA ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574931

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2111 / 2120

页数：10

共 50 条

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