CONVECTIVE-TRANSPORT IN SILICON EPITAXIAL DEPOSITION IN A BARREL REACTOR

被引：16

作者：

LORD, HA

机构：

[1] AT&T Engineering Research Cent,, Princeton, NJ, USA, AT&T Engineering Research Cent, Princeton, NJ, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 05期

关键词：

D O I：

10.1149/1.2100647

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1227 / 1235

页数：9

共 17 条

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