INSTABILITY IN VACUUM DEPOSITED SILICON OXIDE

被引：19

作者：

SWYSTUN, EJ

TICKLE, AC

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 11期

关键词：

D O I：

10.1109/T-ED.1967.16103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：760 / +

页数：1

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