ION-IRRADIATION-INDUCED SOLID-PHASE EPITAXIAL-GROWTH

被引：15

作者：

CHAKI, TK

机构：

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1989年 / 59卷 / 05期

关键词：

D O I：

10.1080/09500838908206347

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：223 / 227

页数：5

共 29 条

[1] INTERSTITIAL STRUCTURE AND DIFFUSION IN DRP METALLIC GLASSES [J].

AHMADZADEH, M ;

CANTOR, B .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1981, 43 (02) :189-219

[2] DIFFUSION DURING ION IRRADIATION IN AMORPHOUS PDCUSI [J].

BOTTIGER, J ;

PAMPUS, K ;

TORP, B .

EUROPHYSICS LETTERS, 1987, 4 (08) :915-919

[3] ATOMIC TRANSPORT IN AMORPHOUS-ALLOYS - AN INTRODUCTION [J].

CAHN, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :3071-3077

[4] RADIATION-DAMAGE IN AN AMORPHOUS LENNARD-JONES SOLID - A COMPUTER-SIMULATION [J].

CHAKI, TK ;

LI, JCM .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (05) :557-565

[5]

CHEN CP, 1980, AM CERAM SOC BULL, V59, P469

[6] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[7] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS [J].

CSEPREGI, L ;

KULLEN, RP ;

MAYER, JW ;

SIGMON, TW .

SOLID STATE COMMUNICATIONS, 1977, 21 (11) :1019-1021

[8] RADIATION-ENHANCED DIFFUSION IN NI/ZR DIFFUSION COUPLES [J].

DING, F ;

AVERBACK, RS ;

HAHN, H .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :1785-1790

[9] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J].

DONOVAN, EP ;

SPAEPEN, F ;

TURNBULL, D ;

POATE, JM ;

JACOBSON, DC .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :698-700

[10]

Griffith AA., 1921, PHILOS T R SOC, V221, P163, DOI DOI 10.1098/RSTA.1921.0006

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