ULSI QUALITY SILICON EPITAXIAL-GROWTH AT 850-DEGREES-C

被引：16

作者：

SILVESTRI, VJ ^{[1
]}

NUMMY, K ^{[1
]}

RONSHEIM, P ^{[1
]}

BENDERNAGEL, R ^{[1
]}

KERR, D ^{[1
]}

PHAN, VT ^{[1
]}

BORLAND, JO ^{[1
]}

HANN, J ^{[1
]}

机构：

[1] APPL MAT INC,SANTA CLARA,CA 95054

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 07期

关键词：

D O I：

10.1149/1.2086935

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

ULSI quality silicon epitaxial films as thin as 0.6 µm have been grown using dichlorosilane at temperatures as low as 850°C and pressures as low as 10 torr in commercially available cylindrical epi reactors. Removal of the substrate surface native oxide by a 5 min hydrogen bake has been observed down to 850°C, 10 torr. In addition, very low defect levels and excellent device characteristics have been measured in the epitaxial films. The results were observed on both 125 and 200 mm substrates. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：2323 / 2327

页数：5

共 7 条

[1] LOW-TEMPERATURE SILICON EPITAXY DEPOSITED BY VERY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION .1. KINETICS [J].