MESH PATTERN OF GE ISLANDS GROWN USING SOLID-PHASE EPITAXY

被引：37

作者：

HIBINO, H

SHIMIZU, N

SHINODA, Y

机构：

[1] NTT Basic Research Laboratories, Musashino-shi

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1993年 / 11卷 / 05期

关键词：

D O I：

10.1116/1.578592

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present mesh patterns of Ge islands grown on a Si (111) surface using solid phase epitaxy. Typical experimental conditions for the formation of these mesh patterns are substrate temperatures of 300-500-degrees-C and a Ge thickness of about 10 angstrom. The mesh pattern is due to preferential crystallization of a-Ge films at steps and at out-of-phase boundaries of 7 X 7 structures.

引用

页码：2458 / 2462

页数：5

共 23 条

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