MODULATION-DOPED N-TYPE SI/SIGE WITH INVERTED INTERFACE

被引：23

作者：

ISMAIL, K ^{[1
]}

CHU, JO ^{[1
]}

SAENGER, KL ^{[1
]}

MEYERSON, BS ^{[1
]}

RAUSCH, W ^{[1
]}

机构：

[1] IBM E FISHKILL,HOPEWELL JCT,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.112085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth of n-type modulation-doped Si/SiGe with the doped SiGe supply layer underneath the strained Si channel. The mobility and charge density are measured in samples with 2- and 3-nm-thick spacers using gated Hall measurements. A peak room temperature mobility of 2200 cm2/V s is measured at a sheet density of 2.5 x 10(12) cm-2. The measurements indicate a clear mobility modulation especially near threshold. Our layer design allows the gate to induce a sheet charge density of up to 3.2 x 10(12) cm-2, before any significant reduction in the mobility is observed.

引用

页码：1248 / 1250

页数：3

共 6 条

[1] HIGH ELECTRON-MOBILITY IN MODULATION-DOPED SI/SIGE [J].