RAMAN SCATTERING FROM INSB SURFACES AT PHOTON ENERGIES NEAR E1 ENERGY GAP

被引：125

作者：

PINCZUK, A

BURSTEIN, E

机构：

[1] Physics Department, Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, PA

来源：

PHYSICAL REVIEW LETTERS | 1968年 / 21卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.21.1073

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have observed surface electric-field-induced and resonance-enhanced Raman scattering by q0 LO phonons in the spectra obtained from InSb surfaces. The data indicate that excitons are responsible for the resonance enhancement. The effects of temperature and externally applied electric fields are discussed. The results suggest the possibility of studying the surface electronic properties by Raman spectroscopy. © 1968 The American Physical Society.

引用

页码：1073 / &

共 10 条

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