89-GHZFT ROOM-TEMPERATURE SILICON MOSFETS

被引：20

作者：

YAN, RH ^{[1
]}

LEE, KF ^{[1
]}

JEON, DY ^{[1
]}

KIM, YO ^{[1
]}

PARK, BG ^{[1
]}

PINTO, MR ^{[1
]}

RAFFERTY, CS ^{[1
]}

TENNANT, DM ^{[1
]}

WESTERWICK, EH ^{[1
]}

CHIN, GM ^{[1
]}

MORRIS, MD ^{[1
]}

EARLY, K ^{[1
]}

MULGREW, P ^{[1
]}

MANSFIELD, WM ^{[1
]}

WATTS, RK ^{[1
]}

VOSHCHENKOV, AM ^{[1
]}

BOKOR, J ^{[1
]}

SWARTZ, RG ^{[1
]}

OURMAZD, A ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 05期

关键词：

D O I：

10.1109/55.145045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the implementation of deep-submicrometer Si MOSFET's that at room temperature have a unity-current-gain cutoff frequency (f(T)) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 angstrom, and a channel length of 0.15-mu-m. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region.

引用

页码：256 / 258

页数：3

共 14 条

[1]

Antoniadis D. A., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P21, DOI 10.1109/IEDM.1991.235433

[2]

Aoki M., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P939, DOI 10.1109/IEDM.1990.237087

[3]

CHEM JGJ, 1980, IEEE EDL, V1, P170

[4]

Fichtner W., 1982, International Electron Devices Meeting. Technical Digest, P722

[5]

Kimura S., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P950, DOI 10.1109/IEDM.1991.235269

[6]

Nanba M., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P443, DOI 10.1109/IEDM.1991.235360

[7] 75-GHZ FT SIGE-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

PATTON, GL ;

COMFORT, JH ;

MEYERSON, BS ;

CRABBE, EF ;

SCILLA, GJ ;

DEFRESART, E ;

STORK, JMC ;

SUN, JYC ;

HARAME, DL ;

BURGHARTZ, JN .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (04) :171-173

[8] HIGH-FREQUENCY PERFORMANCE OF SUBMICROMETER CHANNEL-LENGTH SILICON MOSFETS [J].

RAYNAUD, C ;

GAUTIER, J ;

GUEGAN, G ;

LERME, M ;

PLAYEZ, E ;

DAMBRINE, G .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) :667-669

[9] INVERTER PERFORMANCE OF DEEP-SUBMICROMETER MOSFETS [J].

SAIHALASZ, GA ;

WORDEMAN, MR ;

KERN, DP ;

RISHTON, S ;

GANIN, E ;

NG, HY ;

MOY, D ;

CHANG, THP ;

DENNARD, RH .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) :633-635

[10] DESIGN AND EXPERIMENTAL TECHNOLOGY FOR 0.1-MU-M GATE-LENGTH LOW-TEMPERATURE OPERATION FETS [J].

SAIHALASZ, GA ;

WORDEMAN, MR ;

KERN, DP ;

GANIN, E ;

RISHTON, S ;

ZICHERMAN, DS ;

SCHMID, H ;

POLCARI, MR ;

NG, HY ;

RESTLE, PJ ;

CHANG, THP ;

DENNARD, RH .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) :463-466

← 1 2 →