INVERTER PERFORMANCE OF DEEP-SUBMICROMETER MOSFETS

被引：17

作者：

SAIHALASZ, GA

WORDEMAN, MR

KERN, DP

RISHTON, S

GANIN, E

NG, HY

MOY, D

CHANG, THP

DENNARD, RH

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 12期

关键词：

D O I：

10.1109/55.20419

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：633 / 635

页数：3

共 10 条

[1] DEEP-SUBMICROMETER MOS DEVICE FABRICATION USING A PHOTORESIST-ASHING TECHNIQUE [J].

CHUNG, J ;

JENG, MC ;

MOON, JE ;

WU, AT ;

CHAN, TY ;

KO, PK ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) :186-188

[2]

Horiguchi S., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P761

[3]

JENG MC, 1987, IEDM, P710

[4]

KONAKA S, 1987, 19TH C SOL STAT DEV, P331

[5] MONTE-CARLO SIMULATION OF SUBMICROMETER SI N-MOSFETS AT 77-K AND 300-K [J].

LAUX, SE ;

FISCHETTI, MV .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :467-469

[6] LITHOGRAPHY FOR ULTRASHORT CHANNEL SILICON FIELD-EFFECT TRANSISTOR-CIRCUITS [J].

RISHTON, SA ;

SCHMID, H ;

KERN, DP ;

LUHN, HE ;

CHANG, THP ;

SAIHALASZ, GA ;

WORDEMAN, MR ;

GANIN, E ;

POLCARI, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :140-145

[7] HIGH TRANSCONDUCTANCE AND VELOCITY OVERSHOOT IN NMOS DEVICES AT THE 0.1-MU-M GATE-LENGTH LEVEL [J].

SAIHALASZ, GA ;

WORDEMAN, MR ;

KERN, DP ;

RISHTON, S ;

GANIN, E .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :464-466

[8] DESIGN AND EXPERIMENTAL TECHNOLOGY FOR 0.1-MU-M GATE-LENGTH LOW-TEMPERATURE OPERATION FETS [J].

SAIHALASZ, GA ;

WORDEMAN, MR ;

KERN, DP ;

GANIN, E ;

RISHTON, S ;

ZICHERMAN, DS ;

SCHMID, H ;

POLCARI, MR ;

NG, HY ;

RESTLE, PJ ;

CHANG, THP ;

DENNARD, RH .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) :463-466

[9]

SAIHALASZ GA, 1987, IEDM, P397

[10] ELECTRON VELOCITY OVERSHOOT AT ROOM AND LIQUID-NITROGEN TEMPERATURES IN SILICON INVERSION-LAYERS [J].

SHAHIDI, GG ;

ANTONIADIS, DA ;

SMITH, HI .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :94-96

← 1 →