PHOTOELECTRONIC PROPERTIES OF LPE GAAS-CU

被引:5
作者
CHIAO, SS [1 ]
MATTES, BL [1 ]
BUBE, RH [1 ]
机构
[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
关键词
D O I
10.1063/1.324377
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:261 / 268
页数:8
相关论文
共 49 条
[11]  
FISTUL VI, 1965, FIZ TVERD TELA+, V6, P2999
[12]   DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF COPPER IN GALLIUM ARSENIDE [J].
FULLER, CS ;
WHELAND, JM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) :173-&
[13]   DEFECTS IN GAAS PRODUCED BY COPPER - GAAS-CU DEFECTS PRODUCED BY CU ENERGY ( IONIZATION ) LEVELS HALL EFFECTS RADIOCHEMICAL ANALYSIS 50-300 DEGREES K E [J].
FULLER, CS ;
ALLISON, HW ;
WOLFSTIRN, KB .
APPLIED PHYSICS LETTERS, 1964, 4 (03) :48-&
[14]   KINETICS AND EQUILIBRIA INVOLVING COPPER AND OXYGEN IN GERMANIUM [J].
FULLER, CS ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) :438-&
[15]  
FURUKAWA Y, 1969, JPN J APPL PHYS, V6, P413
[16]  
FURUKAWA Y, 1969, JPN J APPL PHYS, V6, P675
[17]  
GLOVER GH, 1973, IEEE T ELECTRON DEVI, V19, P138
[18]  
GROSS EF, 1967, SOV PHYS SEMICOND+, V1, P241
[19]  
GROSS EF, 1969, FIZ TVERD TELA+, V11, P277
[20]  
GUTKIN AA, 1971, SOV PHYS SEMICOND, V6, P1006