MEASUREMENTS ON PHOTOCONDUCTIVE LIFETIME OF CARRIERS IN GAAS BY OPTOELECTRONIC GATING TECHNIQUE

被引：36

作者：

LEE, CH

ANTONETTI, A

MOUROU, G

机构：

[1] ECOLE POLYTECH,OPT QUANT,F-91120 PALAISEAU,FRANCE

[2] ECOLE POLYTECH,ECOLE NATL SUPERIEURE TECH AVANCEES,OPT APPL LAB,F-91120 PALAISEAU,FRANCE

来源：

OPTICS COMMUNICATIONS | 1977年 / 21卷 / 01期

关键词：

D O I：

10.1016/0030-4018(77)90100-6

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：158 / 161

页数：4

共 12 条

[1]

ANTONETTI A, TO BE PUBLISHED

[2] PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON [J].

AUSTON, DH .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :101-103

[3] ELECTRICAL PROPERTIES OF GOLD-DOPED DIFFUSED SILICON COMPUTER DIODES [J].

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[6] OBSERVATION OF 2-PHOTON CONDUCTIVITY IN GAAS WITH NANOSECOND AND PICOSECOND LIGHT-PULSES [J].

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APPLIED PHYSICS LETTERS, 1972, 20 (10) :392-+

[7] MICROWAVE SWITCHING BY PICOSECOND PHOTOCONDUCTIVITY [J].

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AUSTON, DH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (06) :283-287

[8] PHOTOCONDUCTIVE DETECTOR OF FAST-TRANSITION OPTICAL WAVEFORMS [J].

LAWTON, RA ;

SCAVANNEC, A .

ELECTRONICS LETTERS, 1975, 11 (04) :74-75

[9] PICOSECOND OPTOELECTRONIC SWITCHING IN GAAS [J].

LEE, CH .

APPLIED PHYSICS LETTERS, 1977, 30 (02) :84-86

[10] KILOVOLT PICOSECOND OPTOELECTRONIC SWITCH AND POCKELS CELL [J].

LEFUR, P ;

AUSTON, DH .

APPLIED PHYSICS LETTERS, 1976, 28 (01) :21-23

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