ELECTROOPTIC EFFECTS OF ELECTRON-CYCLOTRON RESONANCE PLASMA-SPUTTERED BI12SIO20 THIN-FILMS ON SAPPHIRE

被引：15

作者：

NOMURA, K

OGAWA, H

机构：

[1] Matsushita Electric Industrial Company, Limited, Central Research Laboratories, Moriguchi

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 06期

关键词：

D O I：

10.1063/1.349308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bi12SiO20 thin films have been prepared on (0001) sapphire substrates by electron cyclotron resonance plasma sputtering with a Bi and Si multitarget system. The epitaxial thin films of gamma-phase Bi12SiO20 have been obtained at the substrate temperature of 600-degrees-C during the sputtering process. Excellent quadratic electro-optic effects for these epitaxial thin films were successfully observed for the first time. The details of the preparation, structure, and electro-optic properties of the Bi12SiO20 thin films are precisely described.

引用

页码：3234 / 3238

页数：5

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