INTERACTION OF THE DOPANTS MG AND SI IN ALXGA1-XAS/GAAS HETEROLAYERS (MOVPE) - APPLICATION TO DQW LASER STRUCTURES

被引：2

作者：

KORTE, L ^{[1
]}

TREICHLER, R ^{[1
]}

SCHREIBER, M ^{[1
]}

TANNER, C ^{[1
]}

KRISTEN, G ^{[1
]}

HANKE, C ^{[1
]}

WEIMANN, G ^{[1
]}

机构：

[1] WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90557-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The interaction of Mg and Si has been studied in GaAs/Al(x)Ga(1-x)As DQW laser structures with a 50 nm Si Si diffusion barrier. The samples have been exposed to capless heat treatments at 860-degrees-C and under Si/SiO2 and Si3N4 cap layers, and were analysed by SIMS. The Mg diffusion is highly dependent on the surface conditions during heating. A Si barrier is effective for temperature treatments under H2/AsH3 and Si/SiO2. It is not effective under a Si3N4 cap where we detected very fast Mg diffusion. The Mg diffusion behaviour is discussed in terms of Si-Mg interaction and the influence of crystal defects.

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页码：779 / 783

页数：5

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