DAMAGE-INDUCED UPHILL DIFFUSION OF IMPLANTED MG AND BE IN GAAS

被引：26

作者：

ROBINSON, HG ^{[1
]}

DEAL, MD ^{[1
]}

STEVENSON, DA ^{[1
]}

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.102743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The redistribution of Be and Mg implants upon post-implant annealing is studied in order to evaluate the influence of implant damage on the diffusion process. Rapid uphill diffusion is observed in the peak of Mg implants in GaAs, whereas Be implants show only uniform, concentration-dependent diffusion. This behavior is explained by the substitutional-interstitial-diffusion mechanism and computer simulations of damage-produced point defects. In the region of uphill diffusion, the dopants diffuse from areas of excess interstitials toward areas of excess vacancies. A critical concentration of point defects is necessary to initiate uphill diffusion. Uphill diffusion can be induced in Be implants by co-implanting with a heavier element such as Ar.

引用

页码：554 / 556

页数：3

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