SUPREM 3.5 - PROCESS MODELING OF GAAS INTEGRATED-CIRCUIT TECHNOLOGY

被引：23

作者：

DEAL, MD ^{[1
]}

HANSEN, SE ^{[1
]}

SIGMON, TW ^{[1
]}

机构：

[1] STANFORD UNIV, SOLID STATE LAB, STANFORD, CA 94305 USA

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1989年 / 8卷 / 09期

关键词：

D O I：

10.1109/43.35546

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：939 / 951

页数：13

共 74 条

[1] ION-IMPLANTATION INTO GALLIUM-ARSENIDE [J].

ANHOLT, R ;

BALASINGAM, P ;

CHOU, SY ;

SIGMON, TW ;

DEAL, M .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3429-3438

[2]

ANHOLT R, COMMUNICATION

[3] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1327-1330

[4] ACTIVATION MECHANISM OF ZINC IMPLANTS IN GAAS [J].

BENSALEM, R ;

SEALY, B .

APPLIED PHYSICS LETTERS, 1987, 50 (19) :1382-1383

[5] SUPRESSION OF DRAIN CONDUCTANCE TRANSIENTS, DRAIN CURRENT OSCILLATIONS, AND LOW-FREQUENCY GENERATION RECOMBINATION NOISE IN GAAS-FETS USING BURIED CHANNELS [J].

CANFIELD, PC ;

FORBES, L .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) :925-928

[6] RARE EARTHS IN COVALENT SEMICONDUCTORS - THULIUM-GALLIUM ARSENIDE SYSTEM [J].

CASEY, HC ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (11) :3401-&

[7]

CHEN CH, 1986, IEEE T ELECTRON DEV, V33, P792, DOI 10.1109/T-ED.1986.22570

[8] DISTRIBUTION OF ELECTRICALLY ACTIVE MG IMPLANTS IN GAAS [J].

CHOE, BD ;

YEO, YK ;

PARK, YS .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4742-4746

[9] FORMATION OF P-TYPE GAAS-LAYERS USING MG+ IMPLANTATION AND CAPLESS RAPID THERMAL ANNEALING [J].

CHOUDHURY, ANMM ;

ARMIENTO, CA .

APPLIED PHYSICS LETTERS, 1986, 49 (26) :1787-1789

[10] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].

CHRISTEL, LA ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5050-5055

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