ACTIVATION MECHANISM OF ZINC IMPLANTS IN GAAS

被引：5

作者：

BENSALEM, R

SEALY, B

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 19期

关键词：

D O I：

10.1063/1.97863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1382 / 1383

页数：2

共 12 条

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[2] THE MECHANISM FOR ACTIVATING TIN IMPLANTS IN GAAS [J].

BENSALEM, R ;

SEALY, BJ .

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[3] SHALLOW ZINC DIFFUSION IN LIQUID-PHASE EPITAXIAL GAAS AND (GAAL)AS AT 600-DEGREES-C [J].

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SMALL, MB ;

GUPTA, D .

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[4]

CASEY HC, 1968, T METALL SOC AIME, V242, P406

[5]

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[6] TRANSIENT ANNEALING FOR THE PRODUCTION OF N+ CONTACT LAYERS IN GAAS [J].

GWILLIAM, R ;

BENSALEM, R ;

SEALY, B ;

STEPHENS, K .

PHYSICA B & C, 1985, 129 (1-3) :440-444

[7]

KENDALL DL, 1968, SEMICONDUCT SEMIMET, V4, P163

[8]

KOGAN LM, 1964, SOV PHYS-SOL STATE, V6, P882

[9] STUDY ON ZN DIFFUSION IN GAAS AND ALXGA1-XAS(X LESS-THAN-OR-EQUAL-TO 0.4) AT TEMPERATURES FROM 726-DEGREES-C TO 566-DEGREES-C [J].

MATSUMOTO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05) :829-835

[10] TRANSIENT ANNEALING FOR THE PRODUCTION OF N+ CONTACT LAYERS IN GAAS [J].

SEALY, BJ ;

BENSALEM, R ;

PATEL, KK .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) :325-329

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