TRANSIENT ANNEALING FOR THE PRODUCTION OF N+ CONTACT LAYERS IN GAAS

被引：16

作者：

SEALY, BJ

BENSALEM, R

PATEL, KK

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 6卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(85)90653-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：325 / 329

页数：5

共 11 条

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[2] AIN CAPPED ANNEALING OF SE AND SN IMPLANTED SEMI-INSULATING GAAS [J].

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SEALY, BJ .

ELECTRONICS LETTERS, 1983, 19 (03) :112-113

[3] TRANSIENT ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE USING A GRAPHITE STRIP HEATER [J].

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FAN, JCC ;

DONNELLY, JP ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :805-807

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JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5050-5055

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SEALY BJ, 1978, I PHYS C SER, V46, P477

[8]

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[9]

SEALY BJ, 1978, IBMM, P487

[10]

SURRIDGE RK, 1977, I PHYS C SER A, V33, P161

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