DIFFUSION OF IMPLANTED BERYLLIUM IN N-TYPE AND P-TYPE GAAS

被引：29

作者：

DEAL, MD ^{[1
]}

ROBINSON, HG ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1063/1.102142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1990 / 1992

页数：3

共 15 条

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[2] SUPREM 3.5 - PROCESS MODELING OF GAAS INTEGRATED-CIRCUIT TECHNOLOGY
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[7] ZINC-ENHANCED BERYLLIUM REDISTRIBUTION IN GAAS/GAALAS GROWN BY MOLECULAR-BEAM EPITAXY
HOUSTON, PA
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[8] ANNEALING STUDIES OF BE-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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COMAS, J
PLEW, L
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 127 - 129
[9] DIFFUSION STUDIES OF BE-IMPLANTED GAAS BY SIMS AND ELECTRICAL PROFILING
MCLEVIGE, WV
VAIDYANATHAN, KV
STREETMAN, BG
COMAS, J
PLEW, L
[J]. SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 1003 - 1008
[10] MCLEVIGE WV, 1978, THESIS U ILLINOIS