COMPARISON OF ELECTRICAL AND ATOMIC PROFILES OF MG-24 AND ZN-64 IMPLANTED GAAS SAMPLES AND GAAS-GAALAS HETEROSTRUCTURES FOR BIPOLAR-TRANSISTOR APPLICATIONS

被引：9

作者：

DUHAMEL, N ^{[1
]}

DAOUDKETATA, K ^{[1
]}

DESCOUTS, B ^{[1
]}

KRAUZ, P ^{[1
]}

GAUNEAU, M ^{[1
]}

GODEFROY, S ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN, F-22301 LANNION, FRANCE

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 06期

关键词：

D O I：

10.1007/BF02661888

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：377 / 382

页数：6

共 25 条

[1]

ANKRI D, Patent No. 7826069

[2] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS [J].

ASBECK, PM ;

MILLER, DL ;

ANDERSON, RJ ;

EISEN, FH .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :310-312

[3] ANNEALING OF ZINC-IMPLANTED GAAS [J].

BARRETT, NJ ;

GRANGE, JD ;

SEALY, BJ ;

STEPHENS, KG .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5470-5476

[4] ANNEALING OF MG IMPLANTS IN GAAS USING INCOHERENT RADIATION [J].

BLUNT, RT ;

SZWEDA, R ;

LAMB, MSM ;

CULLIS, AG .

ELECTRONICS LETTERS, 1984, 20 (11) :444-446

[5] UNIFORM P-TYPE DOPING PROFILES IN MG-24(+)-IMPLANTED, RAPIDLY ANNEALED GAAS/ALGAAS HETEROSTRUCTURES [J].

DESCOUTS, B ;

DUHAMEL, N ;

DAOUDKETATA, K ;

KRAUZ, P ;

GODEFROY, S .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :450-452

[6]

DESCOUTS B, IBMM86

[7] REPRODUCIBLE LOW-RESISTIVITY AUMN OHMIC CONTACT FOR PARA-TYPE GAAS [J].

DUBONCHEVALLIER, C ;

DUCHENOIS, AM ;

BRESSE, JF ;

ANKRI, D .

ELECTRONICS LETTERS, 1985, 21 (14) :614-615

[8] ZN DIFFUSION INTO GAAS BY A 2-TEMPERATURE METHOD [J].

HASEGAWA, O ;

NAMAZU, R .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :203-205

[9] RUTHERFORD BACKSCATTERING MEASUREMENTS OF DOPANT CONCENTRATION IN CD-IMPLANTED GALLIUM-ARSENIDE [J].

INADA, T ;

TAKAHASHI, T ;

SAWADA, M ;

KITAHARA, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :438-442

[10] FORMATION OF P+-LAYER IN GAAS BY DUAL IMPLANTATION OF ZN AND AS [J].

KASAHARA, J ;

TAIRA, K ;

KATO, Y ;

ARAI, M ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06) :L373-L375

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