RUTHERFORD BACKSCATTERING MEASUREMENTS OF DOPANT CONCENTRATION IN CD-IMPLANTED GALLIUM-ARSENIDE

被引：1

作者：

INADA, T ^{[1
]}

TAKAHASHI, T ^{[1
]}

SAWADA, M ^{[1
]}

KITAHARA, M ^{[1
]}

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90595-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：438 / 442

页数：5

共 8 条

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[3]

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[5] CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE - ENCAPSULANT LAYERS FOR ANNEALING GALLIUM-ARSENIDE [J].

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OHKUBO, T ;

SAWADA, S ;

HARA, T ;

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[6]

INADA T, 1979, SOLID STATE TECH, V22, P69

[7] HIGH-PRECISION SIMS MEASUREMENTS OF DOPANT CONCENTRATION IN III-V-SEMICONDUCTORS [J].

MILLER, JN .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :547-550

[8] DOPING OF III-V COMPOUND SEMICONDUCTORS BY ION-IMPLANTATION [J].

STEPHENS, KG .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :589-614

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