DOPING OF III-V COMPOUND SEMICONDUCTORS BY ION-IMPLANTATION

[1] Anderson C. L., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P653

[2] CAPLESS ANNEALING OF ION-IMPLANTED GALLIUM-ARSENIDE BY A MELT-CONTROLLED AMBIENT TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) : 925 - 927

[3] ANDREWS DC, 1982, 2ND GEN C COND MATT

[4] P-N-JUNCTION DIODES IN INP AND IN1-XGAXASYP1-Y FABRICATED BY BERYLLIUM-ION IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (03) : 229 - 231

[5] FORMATION OF THICK, THERMALLY-STABLE HIGH-RESISTIVITY-LAYERS IN GAAS BY OXYGEN ION-IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : 901 - 907

[6] MG+ IMPLANTATION INTO ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3892 - 3893

[7] AUVRAY P, 1982, UNPUB J APPL PHY SEP

[8] SURFACE ACCUMULATION OF ION-IMPLANTED TIN IN GAAS AFTER LASER ANNEALING [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (03) : 507 - 513

[9] BARRETT NJ, COMMUNICATION

[10] SELECTIVE CARRIER REMOVAL USING OXYGEN IMPLANTATION IN GAAS [J]. ELECTRONICS LETTERS, 1981, 17 (23) : 873 - 874

[1] Anderson C. L., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P653

[2] CAPLESS ANNEALING OF ION-IMPLANTED GALLIUM-ARSENIDE BY A MELT-CONTROLLED AMBIENT TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) : 925 - 927

[3] ANDREWS DC, 1982, 2ND GEN C COND MATT

[4] P-N-JUNCTION DIODES IN INP AND IN1-XGAXASYP1-Y FABRICATED BY BERYLLIUM-ION IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (03) : 229 - 231

[5] FORMATION OF THICK, THERMALLY-STABLE HIGH-RESISTIVITY-LAYERS IN GAAS BY OXYGEN ION-IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : 901 - 907

[6] MG+ IMPLANTATION INTO ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3892 - 3893

[7] AUVRAY P, 1982, UNPUB J APPL PHY SEP

[8] SURFACE ACCUMULATION OF ION-IMPLANTED TIN IN GAAS AFTER LASER ANNEALING [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (03) : 507 - 513

[9] BARRETT NJ, COMMUNICATION

[10] SELECTIVE CARRIER REMOVAL USING OXYGEN IMPLANTATION IN GAAS [J]. ELECTRONICS LETTERS, 1981, 17 (23) : 873 - 874