SELECTIVE CARRIER REMOVAL USING OXYGEN IMPLANTATION IN GAAS

被引：15

作者：

BERTH, M

VENGER, C

MARTIN, GM

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 23期

关键词：

D O I：

10.1049/el:19810609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：873 / 874

页数：2

共 14 条

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BINET, M .

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[2] OXYGEN-IMPLANTED DOUBLE-HETEROJUNCTION GAAS-GAALAS INJECTION LASERS [J].

BLUM, JM ;

MCGRODDY, JC ;

MCMULLIN, PG ;

SHIH, KK ;

SMITH, AW ;

ZIEGLER, JF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :413-418

[3]

DEVEAUD B, 1979, I PHYS C SER, V45, P492

[4] CHROMIUM GETTERING IN GAAS BY OXYGEN IMPLANTATION [J].

FAVENNEC, PN ;

GAUNEAU, M ;

LHARIDON, H ;

DEVEAUD, B ;

EVANS, CA ;

BLATTNER, RJ .

APPLIED PHYSICS LETTERS, 1981, 38 (04) :271-273

[5] SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION [J].

FAVENNEC, PN .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2532-2536

[6] CARRIER REMOVAL PROFILES FROM OXYGEN IMPLANTED GAAS [J].

GECIM, S ;

SEALY, BJ ;

STEPHENS, KG .

ELECTRONICS LETTERS, 1978, 14 (10) :306-308

[7]

HUBER AM, 1980, 8TH INT C GAAS REL C

[8] CARRIER COMPENSATION OF N-GAAS BY OXYGEN ION-IMPLANTATION [J].

ITOH, T ;

TSUCHIYA, T ;

TAKEUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (11) :2277-2278

[9]

Lang D. V., 1977, I PHYS C SER, V31, P70

[10]

MARTIN GB, UNPUBLISHED

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