FORMATION OF THICK, THERMALLY-STABLE HIGH-RESISTIVITY-LAYERS IN GAAS BY OXYGEN ION-IMPLANTATION

被引：23

作者：

ASANO, T

ATANASSOV, RD

ISHIWARA, H

FURUKAWA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 05期

关键词：

D O I：

10.1143/JJAP.20.901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：901 / 907

页数：7

共 17 条

[1] A DEEP LEVEL TRANSIENT SPECTROSCOPY SYSTEM USING SINGLE-GATED SIGNAL AVERAGER [J].

ATANASOV, RD .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1980, 51 (09) :1277-1279

[2] OXYGEN-IMPLANTED DOUBLE-HETEROJUNCTION GAAS-GAALAS INJECTION LASERS [J].

BLUM, JM ;

MCGRODDY, JC ;

MCMULLIN, PG ;

SHIH, KK ;

SMITH, AW ;

ZIEGLER, JF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :413-418

[3]

DONNELLY JP, 1977, I PHYS C SER B, V33, P166

[4] SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION [J].

FAVENNEC, PN .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2532-2536

[5] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J].

FOYT, AG ;

LINDLEY, WT ;

WOLFE, CM ;

DONNELLY, JP .

SOLID-STATE ELECTRONICS, 1969, 12 (04) :209-&

[6]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] CARRIER COMPENSATION OF N-GAAS BY OXYGEN ION-IMPLANTATION [J].

ITOH, T ;

TSUCHIYA, T ;

TAKEUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (11) :2277-2278

[8] ELECTRICAL-CONDUCTIVITY OF DISORDERED LAYERS IN GAAS CRYSTAL PRODUCED BY ION-IMPLANTATION [J].

KATO, Y ;

SHIMADA, T ;

SHIRAKI, Y ;

KOMATSUB.KF .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1044-1049

[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[10]

LANG DV, 1975, I PHYS C SER, V23, P581

← 1 2 →