SURFACE ACCUMULATION OF ION-IMPLANTED TIN IN GAAS AFTER LASER ANNEALING

被引：7

作者：

BADAWI, MH ^{[1
]}

SEALY, BJ ^{[1
]}

STEPHENS, KG ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

关键词：

D O I：

10.1088/0022-3727/15/3/016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：507 / 513

页数：7

共 5 条

[1]

AUSTON, 1979, LASER SOLID INTERACT, V50, P11

BADAWI, MH ;

SEALY, BJ ;

CLEGG, JB .

[3] VAPORIZATION OF GAAS DURING LASER ANNEALING [J].

BADAWI, MH ;

SEALY, BJ ;

STEPHENS, KG .

[4] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].

CULLIS, AG ;

WEBBER, HC ;

BAILEY, P .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08) :688-689

[5]

MILNES AG, 1973, DEEP IMPURITIES SEMI, P51