REDISTRIBUTION OF CHROMIUM IN SEMI-INSULATING GAAS-CR DURING LASER ANNEALING

被引：3

作者：

BADAWI, MH ^{[1
]}

SEALY, BJ ^{[1
]}

CLEGG, JB ^{[1
]}

机构：

[1] PHILIPS RES LABS,DIV SOLID STATE ELECTR,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

关键词：

D O I：

10.1049/el:19800385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：554 / 556

页数：3

共 12 条

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[2] VAPORIZATION OF GAAS DURING LASER ANNEALING
BADAWI, MH
SEALY, BJ
STEPHENS, KG
[J]. ELECTRONICS LETTERS, 1979, 15 (24) : 786 - 787
[3] CLEGG JB, SURFACE INTERFACE AN
[4] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS
EVANS, CA
DELINE, VR
SIGMON, TW
LIDOW, A
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 291 - 293
[5] IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS
FAVENNEC, PN
HARIDON, HL
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 699 - 701
[6] FERRIS SD, 1979, 1978 AIP C P, V50
[7] HAISTY RW, 1964, 7TH P INT C PHYS SEM, P1161
[8] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700
[9] PAMPLIN BR, 1975, CRYSTAL GROWTH, P116
[10] Tuck B., 1979, I PHYS C SER, V45, P114