VAPORIZATION OF GAAS DURING LASER ANNEALING

被引：12

作者：

BADAWI, MH

SEALY, BJ

STEPHENS, KG

机构：

[1] Department of Electronic & Electrical Engineering, University of Surrey, Guildford

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 24期

关键词：

Annealing; Gallium arsenide; Laser-beam applications; Vaporisation;

D O I：

10.1049/el:19790559

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is found that when uncoated GaAs samples are irradiated with a Q-switched ruby laser, the samples suffer substantial weight losses for laser energy densities > 0.3 J/cm2. These weight losses are believed to result from the vaporisation of the samples during the period in which the surfaces are in a molten state. The incomplete electrical activation of implanted ions in GaAs after laser annealing can be accounted for by the weight-loss phenomenon. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：786 / 787

页数：2

共 7 条

[1] AUSTON DH, 1978, AIP C P, V50, P11
[2] EFFECT OF SI3N4 ENCAPSULATION ON THE LASER-ANNEALING BEHAVIOR OF GAAS
BADAWI, MH
AKINTUNDE, JA
SEALY, BJ
STEPHENS, KG
[J]. ELECTRONICS LETTERS, 1979, 15 (15) : 447 - 448
[3] BADAWI MH, 1979, INT C SOLID STATE DE
[4] RIMINI E, 1978, AIP C P, V50, P259
[5] SEALY BJ, 1978, AIP, V50, P610
[6] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K
SZE, SM
IRVIN, JC
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 599 - &
[7] Tuck B., 1974, INTRO DIFFUSION SEMI

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