DIFFUSION OF IMPLANTED BERYLLIUM IN GALLIUM-ARSENIDE AS A FUNCTION OF ANNEAL TEMPERATURE AND DOSE

被引：16

作者：

DEAL, MD ^{[1
]}

ROBINSON, HG ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.101700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：996 / 998

页数：3

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