ANNEALING BEHAVIOR OF BE-IMPLANT AND MG-IMPLANT IN GAAS

被引：17

作者：

HUMERHAGER, T

ZWICKNAGL, P

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 03期

关键词：

D O I：

10.1143/JJAP.27.428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：428 / 433

页数：6

共 18 条

[1] MG+ IMPLANTATION INTO ALXGA1-XAS [J].

ASHIGAKI, S ;

MAKITA, Y ;

KANAYAMA, T ;

TSURUSHIMA, T .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3892-3893

[2] ANNEALING OF MG IMPLANTS IN GAAS USING INCOHERENT RADIATION [J].

BLUNT, RT ;

SZWEDA, R ;

LAMB, MSM ;

CULLIS, AG .

ELECTRONICS LETTERS, 1984, 20 (11) :444-446

[3] SHALLOW BERYLLIUM IMPLANTATION IN GAAS ANNEALED BY RAPID THERMAL ANNEALING [J].

CHAMBON, P ;

BERTH, M ;

PREVOT, B .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :162-164

[4] DISTRIBUTION OF ELECTRICALLY ACTIVE MG IMPLANTS IN GAAS [J].

CHOE, BD ;

YEO, YK ;

PARK, YS .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4742-4746

[5] FORMATION OF P-TYPE GAAS-LAYERS USING MG+ IMPLANTATION AND CAPLESS RAPID THERMAL ANNEALING [J].

CHOUDHURY, ANMM ;

ARMIENTO, CA .

APPLIED PHYSICS LETTERS, 1986, 49 (26) :1787-1789

[6] P-N-JUNCTION FORMATION IN N-ALGAAS BY BERYLLIUM ION-IMPLANTATION [J].

COMAS, J ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1981, 39 (12) :989-991

[7] SIMULATION OF ANOMALOUS ACCEPTOR DIFFUSION IN COMPOUND SEMICONDUCTORS [J].

FARLEY, CW ;

STREETMAN, BG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) :453-458

[8] REVIEW OF RAPID THERMAL ANNEALING OF ION-IMPLANTED GAAS [J].

GILL, SS ;

SEALY, BJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (12) :2590-2596

[9]

KANBER H, 1984, P SOC PHOTO-OPT INST, V463, P67, DOI 10.1117/12.941349

[10]

Lindhard J., 1963, KGL DANSKE VIDENSKAB, V33

← 1 2 →