REVIEW OF RAPID THERMAL ANNEALING OF ION-IMPLANTED GAAS

被引:29
作者
GILL, SS
SEALY, BJ
机构
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D O I
10.1149/1.2108477
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2590 / 2596
页数:7
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共 57 条
[1]   RADIATION ANNEALING OF GAAS IMPLANTED WITH SI [J].
ARAI, M ;
NISHIYAMA, K ;
WATANABE, N .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :L124-L126
[2]   HALOGEN LAMP ANNEALING OF GAAS FOR MESFET FABRICATION [J].
BADAWI, MH ;
MUN, J .
ELECTRONICS LETTERS, 1984, 20 (03) :125-126
[3]   ELECTRON-BEAM ANNEALING OF ZINC IMPLANTED GAAS TO CONTROL PROFILE BROADENING [J].
BARRETT, NJ ;
SEALY, BJ .
ELECTRONICS LETTERS, 1984, 20 (04) :175-177
[4]   ANNEALING OF ZINC-IMPLANTED GAAS [J].
BARRETT, NJ ;
GRANGE, JD ;
SEALY, BJ ;
STEPHENS, KG .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5470-5476
[5]  
BARRETT NJ, 1985, MATER RES SOC S P, V35, P451
[6]  
BARRETT NJ, 1984, IOP C P, V74, P77
[7]   CRYSTALLOGRAPHIC SLIP IN GAAS WAFERS ANNEALED USING INCOHERENT RADIATION [J].
BLUNT, RT ;
LAMB, MSM ;
SZWEDA, R .
APPLIED PHYSICS LETTERS, 1985, 47 (03) :304-306
[8]   ANNEALING OF MG IMPLANTS IN GAAS USING INCOHERENT RADIATION [J].
BLUNT, RT ;
SZWEDA, R ;
LAMB, MSM ;
CULLIS, AG .
ELECTRONICS LETTERS, 1984, 20 (11) :444-446
[9]   TRANSIENT ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE USING A GRAPHITE STRIP HEATER [J].
CHAPMAN, RL ;
FAN, JCC ;
DONNELLY, JP ;
TSAUR, BY .
APPLIED PHYSICS LETTERS, 1982, 40 (09) :805-807